PIEZOELECTRIC THIN FILM, MANUFACTURING METHOD THEREFOR, AND PIEZOELECTRIC ELEMENT

摘要

There is provided a piezoelectric thin film composed of an aluminum nitride which contains an inexpensive element other than scandium and has an increased piezoelectric coefficient. The piezoelectric thin film is composed of an aluminum nitride containing magnesium and niobium, wherein 31 to 120 atomic percent of the niobium is contained relative to 100 atomic percent of the magnesium, and the total content of magnesium and niobium relative to the total sum of contents of magnesium, niobium and aluminum falls within the range of 10 to 67 atomic percent.