| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile TCAM cell and a nonvolatile TCAM word circuit which have reduced delay time.SOLUTION: A nonvolatile TCAM cell and a nonvolatile TCAM word circuit comprises: first and second MOS transistors for selection, each of which has one end connected to a first connection point and has a gate connected to first and second search lines respectively; first and second spin injection MTJ elements which are connected to a second connection point, respectively have one ends connected to the other ends of the first and second MOS transistors and have the other ends connected to a bit line or GND; third and fourth MOS transistors which are connected to one ends of the first and second MTJ elements, have gates respectively connected to word lines, and perform writing to the MTJ elements; a fifth MOS transistor arranged between a match line and the GND; and a sense amplifier arranged between the first connection point and a gate of the fifth MOS transistor. |
