| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can form a through electrode on a thick semiconductor substrate for MEMS application with high throughput, and to provide a semiconductor device obtained thereby.SOLUTION: In an embodiment, a method for manufacturing a semiconductor device comprises: a first through hole formation process S1; a second through hole formation process S2; and a plating process S3. The first through hole formation process S1 is a process for forming a first through hole piercing a first semiconductor substrate such that a diameter gradually decreases from an outside surface toward an inside surface of the first semiconductor substrate. The second through hole formation process S2 is a process of forming a second through hole piercing an insulation layer and a second semiconductor substrate, after the first through hole formation process S1, such that a diameter gradually increases from a bottom of the first through hole toward an outside surface of the second semiconductor substrate. The plating process S3 is a process for forming a through electrode by performing metal plating on the first through hole and the second through hole. |
