| 摘要 |
PROBLEM TO BE SOLVED: To secure resistance to alkalinity used for etching treatment in a substrate with a transparent conductive film in which a ground layer, a transparent dielectric layer, a transparent conductive film layer are sequentially laminated on a transparent film substrate.SOLUTION: In a substrate with a transparent conductive film in which a ground layer, a transparent dielectric layer, and a transparent conductive film layer are sequentially laminated on a transparent film substrate, surface free energy of SiO(1.2<x<2.2) that is the ground layer not directly contacting to the transparent conductive film layer subjected to etching treatment is made at least 60 mN/m and at most 140 mN/m, and a refraction index thereof is made 1.45-2.00. |
