THIN-FILM TRANSISTOR AND MANUFACTURING METHOD THEREFOR, AND DISPLAY COMPONENT

摘要

Embodiments of the invention provide a thin film transistor and a manufacturing method thereof and a display device. The thin film transistor comprises a gate electrode (502), a gate insulation layer (503), an active layer (504), an ohmic contact layer (505a-1, 505a-2,505a-3), a source electrode (507a) and a drain electrode (507b), and the source electrode (507a) and the drain electrode (507b) are connected to the active layer (504) by the ohmic contact layer (505a-1, 505a-2,505a-3). The ohmic contact layer (505a-1, 505a-2,505a-3) is provided at a lateral side of the active layer (504) and contacts the lateral side of the active layer (504).