| 摘要 |
Provided is a hetero-junction solar cell with less warpage of the substrate even with a small thickness of the silicon crystalline substrate, and having a high photoelectric conversion efficiency. The crystalline silicon substrate (1) has a thickness of 50 µm to 200 µm, and has a rough structure on the light-incident-side surface thereof. The surface of the transparent conductive layer (4) in the light incidence side has an irregular structure. The top-bottom distance in the irregular structure of the transparent conductive layer (4) in the light-incidence-side is preferably smaller than the top-bottom distance in the rough structure of the crystalline silicon substrate (1) in the-light-incidence side. The distance between tops of the projections in the irregular structure on the surface of the transparent conductive layer (4) in the light incidence side is preferably smaller than the distance between tops of the projections in the rough structure on the surface of the crystalline silicon substrate (1) in the light incidence side. Preferably, the transparent conductive layer (4) in the light incidence side includes a zinc oxide layer having a thickness of 300 to 2500 nm, and the zinc oxide layer includes hexagonal zinc oxide preferentially oriented along (10-10) plane direction, (11-20) plane direction, or (10-11) plane direction. |
