| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit short-circuit between an upper electrode and a lower electrode.SOLUTION: A semiconductor device comprises: a substrate 10; a metallic lower electrode 12 formed on the substrate so as to have a through hole 12a; a dielectric film 14 including a first dielectric film 14a formed on the lower electrode 12 and a second dielectric film 14b formed on a lateral face of the lower electrode 12 in the through hole 12a so as to be connected with the first dielectric film 14a; an upper electrode 16 including a first metal film 16a formed on the first dielectric film 14a and a second metal film 16b formed on a lateral face of the second dielectric film 14b so as to be connected with the first metal film 16a; and an air bridge 18 having an end part 18a which is arranged in the through hole 12a and contacts a lateral face of the second metal film 16b. |
