| 摘要 |
PROBLEM TO BE SOLVED: To reduce man-hour in manufacturing.SOLUTION: A semiconductor device manufacturing method comprises: a process of forming a source electrode 14 and a drain electrode 16 on a semiconductor layer 12 formed on a top face of a substrate 10; a process of forming a single first metal layer 19a including nickel on a top face of the semiconductor layer; a process of concurrently forming a gate electrode pattern composed of the first metal layer on a position sandwiched by the source electrode and the drain electrode, and a backing pattern composed of the first metal layer on a position distanced from the gate electrode pattern; and an etching process of forming a through hole which pierces the substrate and the semiconductor layer from an undersurface of the substrate toward the backing pattern by using the backing pattern as an etching stopper. |
