| 发明名称 |
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD |
| 摘要 |
A plasma processing method of processing layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container and having a layer to be processed and an undercoating layer disposed under the layer by plasma in the processing chamber, includes a step of calculating an etching amount of the layer to be processed at time during processing of any wafer by using result of comparing real pattern data with detection pattern data obtained by combining two patterns of intensity having as parameter wavelength of interference light obtained by processing the layer structure containing three or more undercoating layers having different thickness and the layer to be processed in advance of the processing of the any wafer and areal pattern of intensity having as parameter the wavelength of the interference light obtained during processing of the layer structure on the any wafer. |
| 申请公布号 |
US2016284610(A1) |
申请公布日期 |
2016.09.29 |
| 申请号 |
US201514852189 |
申请日期 |
2015.09.11 |
| 申请人 |
Hitachi High-Technologies Corporation |
发明人 |
USUI Tatehito;HIROTA Kosa;INOUE Satomi;NAKAMOTO Shigeru;FUKUCHI Kousuke |
| 分类号 |
H01L21/66;H01J37/32;H01L21/67;H01L21/3065;H01L21/308 |
主分类号 |
H01L21/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A plasma processing method of processing layer structure previously formed on an upper surface of a wafer disposed in a processing chamber within a vacuum container and having a layer to be processed and an undercoating layer disposed under the layer to be processed by means of plasma formed in the processing chamber, comprising
a step of calculating an etching amount of the layer to be processed at time during processing of any wafer by using result of comparing real pattern data with detection pattern data obtained by combining two patterns of intensity having as parameter wavelength of interference light during the processing obtained by processing the layer structure containing three or more undercoating layers having different thickness and the layer to be processed in advance of the processing of the any wafer and a real pattern of intensity having as parameter the wavelength of the interference light obtained from the layer to be processed during processing of the layer structure on the any wafer and a step of judging arrival at a target of the processing of the layer to be processed using the etching amount. |
| 地址 |
Tokyo JP |
