MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE

摘要

A manufacturing method for a semiconductor device, the method, comprising forming, on a substrate, a first resist pattern including a plurality of line patterns extending in a predetermined direction, injecting an impurity into the substrate by using the first resist pattern, removing the first resist pattern, forming a second resist pattern including a plurality of second line patterns extending in the predetermined direction, and injecting an impurity into the substrate by using the second resist pattern, wherein, in the forming the second resist pattern, the plurality of second line patterns are respectively formed between places where the adjacent first line patterns are formed.

主权项

1. A manufacturing method for a semiconductor device, the method comprising:
forming a first resist film on a substrate; forming a first resist pattern including a plurality of line patterns extending in a predetermined direction in a planar view with respect to an upper surface of the substrate by exposing and developing the first resist film; injecting an impurity into the substrate by using the first resist pattern; removing the first resist pattern followed by forming a second resist film on the substrate; forming a second resist pattern including a plurality of second line patterns extending in the predetermined direction in the planar view by exposing and developing the second resist film; and injecting an impurity into the substrate by using the second resist pattern, wherein in the forming the second resist pattern, the plurality of second line patterns are respectively formed between places where the adjacent first line patterns are formed.