CHAMBER COMPONENTS FOR EPITAXIAL GROWTH APPARATUS

摘要

Chamber components for an epitaxial growth apparatus are disclosed. A reaction chamber defined and formed by a ceiling plate. A reactant gas is rectified in a reactant gas supply path disposed in the side wall, so that a horizontal component in a flow direction of the reactant gas in the reaction chamber corresponds to a horizontal component in a direction extending from the center of an opening of the reactant gas supply path. Improvements to the upper side wall, susceptor and rectification plate of the epitaxial growth apparatus have resulted in improvements to the uniformity and formation speed of the epitaxial layer formed on substrates resulting in higher throughput and lower defects.

主权项

1. A susceptor for supporting a substrate within an epitaxial growth apparatus, comprising:
an annular body extending to an outer radius from a center axis, the annular body including a top surface and a bottom surface opposite the top surface, the top surface including a concave portion disposed at the center axis and extending to an inner radius, a non-concave portion disposed along the circumference of the annular body, and a transition portion connecting the concave portion to the non-concave portion, the transition portion is configured to form an abutment with the substrate and support the substrate, wherein the transition portion is at a higher elevation than the concave portion and at a lower elevation than the non-concave portion when the top surface is facing upward and the center axis is disposed vertically; and a plurality of through holes extending from the top surface to the bottom surface, wherein the plurality of through holes are positioned within the concave portion and the non-concave portions, wherein the density of the plurality of through holes in the concave portion and the non-concave portion is at least 5.0 through holes per square centimeters.