| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can inhibit fluctuation in voltage withstanding in a termination region.SOLUTION: A semiconductor device according to an embodiment has a first conductivity type first semiconductor region, a second conductivity type second semiconductor region, a first conductivity type third semiconductor region, a first electrode, a first insulation layer and a second electrode. The first semiconductor region has a first region and a second region. The second region is provided around the first region. The second semiconductor region is provided on the first semiconductor region. The third semiconductor region is provided on the first semiconductor region. The first electrode is provided on the third semiconductor region. The first electrode is electrically connected with the third semiconductor region. The first insulation layer is provided on the firsts electrode. The second electrode is provided on the second semiconductor region. The second electrode is electrically connected with the second semiconductor region. A part of the second electrode is located on the first insulation layer.SELECTED DRAWING: Figure 2 |
