MAGNETIC STORAGE ELEMENT AND MAGNETIC MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a magnetic storage element capable of reducing writing current.SOLUTION: The magnetic storage element in an embodiment, includes: a first magnetic layer 24; a second magnetic layer 22; a tunnel barrier layer 23 which is formed between the first magnetic layer and the second magnetic layer; an electrode 28 formed on a side face of the first magnetic layer; and an insulator layer 27 which is formed between the first magnetic layer and the electrode, and which includes a first area R1 having a first film thickness b1 and a second area R2 having a second film thickness b2 thinner than that of the first film thickness.SELECTED DRAWING: Figure 5