发明名称 PATTERN FORMATION METHOD, ETCHING METHOD, ELECTRONIC DEVICEMANUFACTURING METHOD, AND ELECTRONIC DEVICE
摘要 A pattern formation method includes step (i) of forming a first negative type pattern on a substrate by performing step (i-1) of forming a first film on the substrate using an actinic ray-sensitive or radiation-sensitive resin composition, step (i-2) of exposing the first film and step (i-3) of developing the exposed first film in this order; step (iii) of forming a second film at least on the first negative type pattern using an actinic ray-sensitive or radiation-sensitive resin composition (2); step (v) of exposing the second film; and step (vi) of developing the exposed second film and forming a second negative type pattern at least on the first negative type pattern.
申请公布号 SG11201606466Y(A) 申请公布日期 2016.09.29
申请号 SG11201606466Y 申请日期 2015.02.04
申请人 FUJIFILM CORPORATION 发明人 UEBA RYOSUKE;IGUCHI NAOYA;YAMANAKA TSUKASA;TANGO NAOHIRO;SHIRAKAWA MICHIHIRO;KATO KEITA
分类号 G03F7/40;G03F7/038;G03F7/039;H01L21/027 主分类号 G03F7/40
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