| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which enables improvement in avalanche capability.SOLUTION: A semiconductor device comprise a cell region, a gate pad region and a cell edge region which are composed of SiC. The cell region has an n+ type drain region 20, an n drift region 16, a p base region 14, an n source region 12, a p contact region 18 which is formed in the p base region 14 and has a concentration higher than that of the p base region 14, a gate insulation film 22, a cell gate electrode 24, source electrode 26 and a drain electrode 28. The gate pad region has a field insulation film 32 and a field region 36 in which a peak concentration of a p type impurity is equal to or higher than 1×10cm. The cell edge region has a p type region 40 connected ot the field region 36, a p+ type region 42 having a concentration higher than that of the p type region 40 and a source electrode 26 which contacts the p+ type region 42 at a second contact part B. A whole area of a face in the second contact part B where the source electrode 26 contacts is a p type SiC region.SELECTED DRAWING: Figure 1 |
