WIRING STRUCTURES, METHODS OF FORMING WIRING STRUCTURES AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES

摘要

The present invention relates to a method for forming a wiring structure, which comprises: forming a lower structure on a substrate; forming an interlayer insulating film including an opening unit on the lower structure; forming a liner film along the interlayer insulating film and a surface of the opening unit; performing ion bombardment treatment on the surface of the liner film; and forming a first metal film to at least partially fill the opening unit, through a reflow process, on the liner film performed with the ion bombardment treatment.