发明名称 RF AMPLIFIER WITH CONDUCTOR-LESS REGION UNDERLYING FILTER CIRCUIT INDUCTOR, AND METHODS OF MANUFACTURE THEREOF
摘要 An amplifier includes a semiconductor substrate. A first conductive feature partially covers the bottom substrate surface to define a conductor-less region of the bottom substrate surface. A first current conducting terminal of a transistor is electrically coupled to the first conductive feature. Second and third conductive features may be coupled to other regions of the bottom substrate surface. A first filter circuit includes an inductor formed over a portion of the top substrate surface that is directly opposite the conductor-less region. The first filter circuit may be electrically coupled between a second current conducting terminal of the transistor and the second conductive feature. A second filter circuit may be electrically coupled between a control terminal of the transistor and the third conductive feature. Conductive leads may be coupled to the second and third conductive features, or the second and third conductive features may be coupled to a printed circuit board.
申请公布号 EP3073639(A1) 申请公布日期 2016.09.28
申请号 EP20160162063 申请日期 2016.03.23
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 JONES, JEFFREY KEVIN;ABDO, DAVID;NOORI, BASIM
分类号 H03F3/195;H03F1/02;H03F1/56;H03F3/21;H03F3/213 主分类号 H03F3/195
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