SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

Provided is a semiconductor device which minimizes a distance between a channel and a contact formed on a source/drain area, and maintains the distance between the channel and the contact, thereby reducing a current crowding effect (CCE). The semiconductor device comprises: a substrate; a fin extended on the substrate in a lengthwise direction; a gate structure arranged on the fin, and intersecting with the fin; a spacer on a sidewall of a gate electrode; the source/drain area arranged in at least one side of the gate structure, arranged inside the fin, and including a first recess; and a silicide layer filling the first recess.