| 摘要 |
Disclosed is a semiconductor device (10) which is embedded with a non-volatile element (100) in which a state immediately preceding the supply of power is maintained even when power is no longer supplied. The non-volatile element (100) is provided with a variable resistor film (40), and an upper electrode (50) and lower electrode (wiring (31)) for the variable resistor film (40). The variable resistor film (40) is electrically connected to a lower layer wiring (wiring (31)) disposed on the lower layer side of the variable resistor film (40) and to an upper layer wiring (wiring (32)) disposed on the upper layer side. The lower electrode (wiring (31)) also functions as the lower layer wiring. Moreover, the upper electrode (50) has an upper surface which is formed with steps (S) between a center section (P1) and an outer circumferential section (P2), and the center section (P1) and the outer circumferential section (P2) are electrically connected to the upper layer wiring (wiring (32)) via a barrier metal film (32a). |
