抵抗変化型ランダムアクセスメモリおよびその製造方法

摘要

Provided is a resistive random access memory including a first electrode layer (102), a second electrode layer (106), and a variable resistance layer (104) disposed between the first electrode layer and the second electrode layer, wherein the second electrode layer includes a first sublayer (108), a second sublayer (112), and a conductive metal oxynitride layer (110) disposed between the first sublayer and the second sublayer.