| 摘要 |
The uniformity in electroplating metal such as copper on a semiconductor wafer is improved by using an electroplating apparatus having a flow-forming element positioned in the proximity of the semiconductor wafer, wherein the flow-forming element is made of a resistive material and has two types of non-communicating channels made through the resistive material, such that the electrolyte is transported toward the substrate through both types of channels. The first type of channels is not perpendicular to the plane defined by a plating face of the substrate. The second type of channels is perpendicular to the plane defined by the plating face of the substrate. The first and second types of channels are substantially spatially segregated. In one embodiment, multiple first-type channels are located in the central part of the flow-forming element and are surrounded multiple second-type channels. |
