发明名称 QUANTUM DOT SENSOR READOUT
摘要 An apparatus, comprising a quantum dot graphene field effect transistor configured to operate in such a way that photons incident thereon cause electron-hole pairs to be formed; a connector element connected to the back gate of the quantum dot graphene field effect transistor; a switch element configured to function as an output switch in order to provide an output for a current flowing through the quantum dot graphene field effect transistor; wherein the quantum dot graphene field effect transistor is configured to be back gate biased via the connector element connected to the back gate in such a way that the electrons or the holes formed are trapped in an at least one quantum dot and respectively the holes or the electrons migrate to the channel of the quantum dot field effect transistor; and wherein a drain to source voltage connected to the quantum dot graphene field effect transistor causes a current proportional to the charge of the holes or electrons trapped at the quantum dots by the electrons or holes to flow in the channel.
申请公布号 EP3073728(A1) 申请公布日期 2016.09.28
申请号 EP20150160237 申请日期 2015.03.23
申请人 NOKIA TECHNOLOGIES OY 发明人 VOUTILAINEN, MARTTI;KALLIOINEN, SAMI
分类号 H04N5/374 主分类号 H04N5/374
代理机构 代理人
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