发明名称 半導体記憶装置
摘要 A semiconductor storage device 1 includes: an input controller (3); and a content-addressable memory block (2) connected to the input controller (3). Each word circuit (4) of the content-addressable memory block (2) includes: a k-bit 1st-stage sub word (4a) connected to search line 1 (SL1) of the input controller (3); and an (n-k)-bit 2nd-stage sub word (4b) connected to search line 2 (SL2) of the input controller (3). The k-bit 1st-stage sub word (4a) and the (n-k)-bit 2nd-stage sub word (4b) are separated by a segmentation circuit (5). When the 1st-stage sub word outputs a match signal, the match result is stored in the segmentation circuit (5), and a plurality of local match circuits within the 2nd-stage sub word (4b) are operated.
申请公布号 JP5998381(B2) 申请公布日期 2016.09.28
申请号 JP20120105558 申请日期 2012.05.06
申请人 国立大学法人東北大学 发明人 羽生 貴弘;松永 翔雲;鬼沢 直哉;ガウデット,ヴィンセント
分类号 G11C15/04 主分类号 G11C15/04
代理机构 代理人
主权项
地址