发明名称 |
PASSIVATION STACK ON A CRYSTALLINE SILICON SOLAR CELL |
摘要 |
A method for manufacturing a passivation stack on a crystalline silicon solar cell device. The method includes providing a substrate comprising a crystalline silicone layer such as a crystalline silicon wafer or chip, cleaning a surface of the crystalline silicon layer by removing an oxide layer at least from a portion of one side of the crystalline silicon layer, depositing, on at least a part of the cleaned surface, a layer of silicon oxynitride, and depositing a capping layer comprising a hydrogenated dielectric material on top of the layer of silicon oxynitride, wherein the layer of silicon oxynitride is deposited at a temperature from 100° C. to 200° C., and the step of depositing the layer of silicon oxynitride includes using N20 and SiH4 as precursor gasses in an N2 ambient atmosphere and depositing silicon oxynitride with a gas flow ratio of N20 to SiH4 below 2. |
申请公布号 |
EP3072165(A1) |
申请公布日期 |
2016.09.28 |
申请号 |
EP20140864819 |
申请日期 |
2014.11.19 |
申请人 |
INSTITUTT FOR ENERGITEKNIKK |
发明人 |
ZHU, JUNJIE;ZHOU, SU;HAUG, HALVARD;STENSRUD MARSTEIN, ERIK;FOSS, SEAN ERIK;WANG, WENJING;ZHOU, CHUNLAN |
分类号 |
H01L31/18;H01L31/0216 |
主分类号 |
H01L31/18 |
代理机构 |
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