| 摘要 |
A surface emitting semiconductor laser includes: a substrate; a first semiconductor multilayer reflector on the substrate including laminated pairs of a high refractive index layer relatively high in refractive index and a low refractive index layer relatively low in refractive index; an active region on or above the first reflector; a second semiconductor multilayer reflector on or above the active region including laminated pairs of a high refractive index layer relatively high in refractive index and a low refractive index layer relatively low in refractive index; and a cavity extending region formed between the first reflector and the active region or between the second reflector and the active region, having an optical film thickness greater than an oscillation wavelength, extending a cavity length, including a conductive semiconductor material, and including an optical loss causing layer at at least one node of a standing wave of a selected longitudinal mode. |
