| 摘要 |
Disclosed are a semiconductor device and a method for manufacturing the same. The semiconductor device of the present invention comprises: an interlayer insulation film disposed on a substrate and including a plurality of blocks, and a metal film disposed on at least a part of the interlayer insulation film. The width of the metal film on at least any one among the plurality of blocks is different from the width of the metal film on at least another one among the plurality of blocks. According to the present invention, the signal delay of the semiconductor device can be minimized by retargeting the metal film to control the width of the metal film. |
