| 摘要 |
PROBLEM TO BE SOLVED: To provide a polysiloxane composition which is suitable for formation of a resist underlayer film, is capable of forming a silicon-containing film excellent in adhesivity with a resist film, has resist developer resistance and oxygen ashing resistance, leaving little resist remaining in developing, and is good in the resist pattern shape and causes little collapse; and to provide a method for forming a pattern in which the resist pattern shape is good and little collapses and the micronization is possible.SOLUTION: There are provided a polysiloxane composition including (A) a polysiloxane, and (B) a compound having a nitrogen-containing heterocyclic structure and at least one selected from a polar group and an ester group, and a method for forming a pattern using a resist underlayer film obtained from a polysiloxane composition having an acid diffusion-controlling agent. |
