发明名称 Semiconductor device
摘要 In a semiconductor device, memory modules each having a low power consumption mode that is enabled and disabled by a control signal belong to a memory block. A transmission path of the control signal is provided such that the control signal is inputted in parallel to the memory module via an inside-of-module path, and such that the control signal is outputted by a particular memory module of the memory modules via the inside-of-module path to a downstream outside-of-module path. The particular memory module in the memory block is selected such that it has a greater storage capacity than the other memory modules belonging to this same memory block have.
申请公布号 EP2549481(B1) 申请公布日期 2016.09.28
申请号 EP20120172625 申请日期 2012.06.19
申请人 RENESAS ELECTRONICS CORPORATION 发明人 YAMAKI, TAKASHI
分类号 G11C11/417;G11C5/14;G11C7/22 主分类号 G11C11/417
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