SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME

摘要

The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device comprises: a substrate including a cell region and a dummy region; first channel structures arranged on the cell region and extended towards a first direction perpendicular to an upper surface of the substrate; gate lines surrounding an outer wall of the first channel structures, separated from each other and stacked along the first direction, and extended towards a second direction; common source lines arranged between the gate lines on the cell region and extended towards the second direction; dummy patterns stacked on the dummy region to be separated along the first direction while having a step shape towards a third direction perpendicular to the second direction, wherein at least a part of the dummy lines include the same conductive material as that of the gate lines; and dummy source lines extended on the dummy region while penetrating the dummy patterns. According to the present invention, defects due to stress are reduced, so a semiconductor device has higher reliability.