| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device and a manufacturing method of the same, which support reduction in on-resistance and reliability of a gate oxide film at the same time.SOLUTION: A silicon carbide semiconductor device of the present embodiment comprises: a first conductivity type SiC substrate 11; a first conductivity type epitaxial layer 12 formed on the SiC substrate 11; a second conductivity type well region 13 selectively formed in a surface layer of the epitaxial layer 12; a first conductivity type source region 14 selectively formed in a surface layer of the well region 13; a gate oxide film 21 formed over from a surface of the well region 13 sandwiched by the source region 14 and the epitaxial layer 12 to a surface of the epitaxial layer 12; and a gate electrode 22 formed on the gate oxide film 21. An interface between the gate oxide film 21 and the epitaxial layer 12 has a negative fixed charge 31. |
