Vertical Fin-FET semiconductor device

摘要

A vertical Fin-FET semiconductor device comprising:
a. a semiconductor substrate,
b. a current-blocking structure disposed on the semiconductor substrate and comprising:
i. a first layer of a first conductive type,
ii. a layer of a second conductive type overlaying the first layer,
iii. a second layer of the first conductive type overlying the layer of the second conductive type, and
c. at least one vertical semiconductor fin disposed on the current-blocking structure, wherein said fin comprises the following portions:
i. a doped bottom portion contacting the current-blocking structure,
ii. a doped top portion opposite to the doped bottom portion, and
iii. an undoped portion present between the doped bottom portion and the doped top portion. A method to produce the same.