| 摘要 |
Provided are: a method for producing an n-type CIGS alloy or an n-type CIGSS alloy able to increase the conversion efficiency of a solar cell and able to highly precisely form a p-n homojunction layer at the interface between a light absorbing layer and a buffer layer; and a method for producing a solar cell. The n-type CIGS alloy is produced by means of: a first step for producing a CIG alloy by mixing copper, indium, and gallium, vacuum sealing the result in an ampoule, and causing crystallization at a high temperature; a second step for pulverizing the CIG alloy to produce a CIG alloy powder; and a third step for producing an n-type CIGS alloy by admixing selenium and a compound comprising a group IIb element and a group VIb element to the pulverized CIG alloy, and causing crystallization at a high temperature. The compound comprising a group IIb element and a group VIb element is cadmium selenide or zinc selenide. The n-type CIGSS5 alloy further includes sulfur, and the sulfur is added in the third step. |
