| 摘要 |
A light emitting device (100) includes a light emitting structure (130) including a second conduction type semiconductor layer (132), an active layer (134), and a first conduction type semiconductor layer (136), a second electrode layer (120) arranged under the light emitting structure, a first electrode layer (115) having at least portion extending to contact with the first conduction type semiconductor layer passing the second conduction type semiconductor layer and the active layer, and an insulating layer (140) arranged between the second electrode layer and the first electrode layer, between the second conduction type semiconductor layer and the first electrode layer, and between the active layer and the first electrode layer, wherein said at least one portion of the first electrode layer contacting the first conduction type semiconductor layer has a roughness (118,119). |
