ETCHING SOLUTION COMPOSITION FOR COPPER-BASED METAL LAYER AND ETCHING METHOD USING THE SAME

摘要

The present invention relates to an etching solution composition for copper-based metal films and an etching method using the same. According to the present invention, the etching solution composition comprises: (a) 0.5-20 wt% of persulfate; (b) 0.01-2 wt% of a fluorine compound; (c) 1-10 wt% of inorganic acid; (d) 0.5-5 wt% of a cyclic amine compound; (e) 0.1-5 wt% of a chlorine compound; (f) 0.1-5 wt% of a thiophen-based compound; (g) 0.1-10 wt% of organic acid or an organic acid salt; and (h) residual water, with respect to the total weight of the composition. According to the present invention, the etching solution composition prevents formation of non-soluble precipitates by copper ions, occurring in initial etching solutions.