| 摘要 |
PROBLEM TO BE SOLVED: To provide a wafer processing method capable of reducing the possibility that the height of bumps varies and electric connection becomes unstable.SOLUTION: A wafer processing method comprises: an embedded electrode detection step of detecting depths of tips of a plurality of embedded electrodes from a rear surface of a wafer; and a rear surface grinding step of thinning the wafer by grinding the rear surface of the wafer to such an extent that the embedded electrodes are not exposed to the rear surface after performing the embedded electrode detection step. The rear surface grinding step further includes: a rough grinding step of roughly grinding the rear surface of the wafer; a chuck table cleaning step of detecting presence or absence of a dimple in the wafer after performing the rough grinding step; cleaning a holding surface 36a of a chuck table 20 when a dimple is detected in the wafer; and finish-grinding step of finish-grinding the roughly ground rear surface after performing the chuck table cleaning step or when a dimple is not detected in the wafer. |
