| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which field concentration just under an edge part of a LOCOS oxide film is easily alleviated, and which can achieve an excellent breakdown voltage and excellent resistance in a semiconductor layer just under the LOCOS oxide film.SOLUTION: A semiconductor device (1) has a profile in which at least a part (22a, 22b) of edges (22a, 22b) of a LOCOS oxide film (22), which terminate in a lateral direction with respect to a surface of a semiconductor substrate terminates by being sandwiched by a top face and an undersurface at an angle (&thetas;) of not less than 15 degrees and not more than 30 degrees. |
