发明名称 MASK BLANK AND MAKING METHOD
摘要 The present invention relates to a mask blank which has a film including a single layer or a plurality of layers on a transparent substrate with respect to exposure light, wherein each layer constituting the single layer and the plurality of layers is respectively selected from a light functional film and a processing assisting film and the film including the single layer or the plurality of layers is not formed on a side, a chamfered surface, a boundary unit of the chamfered surface and a main surface and a boundary unit of the chamfered surface and a back surface of the substrate and is formed on the main surface of the substrate. In addition, provided is the mask blank having small particle defects and, especially, the number of particle defects having a predetermined size which is 0.
申请公布号 KR20160110174(A) 申请公布日期 2016.09.21
申请号 KR20160028146 申请日期 2016.03.09
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 INAZUKI YUKIO;KANEKO HIDEO
分类号 G03F1/50;G03F1/66;G03F7/00;G03F7/20;H01L21/033;H01L21/203 主分类号 G03F1/50
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