发明名称 MULTI-BEAM WRITING OF PATTERN AREAS OF RELAXED CRITICAL DIMENSION
摘要 To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. For a pattern which comprises a primary pattern region (102) to be written with a predetermined primary feature size and a secondary pattern region (103) which is composed of structure features capable of being written with a secondary feature size, larger than the primary feature size. The structure features of the primary pattern region (102) are written by exposing a plurality of exposure spots on grid positions of a first exposure grid; the structure features in the secondary pattern region (103) are written by exposing a plurality of exposure spots on grid positions of a second exposure grid (164) according to a second arrangement which is coarser than the regular arrangement of the first exposure grid.
申请公布号 EP3070528(A1) 申请公布日期 2016.09.21
申请号 EP20160160622 申请日期 2016.03.16
申请人 IMS NANOFABRICATION AG 发明人 PLATZGUMMER, ELMAR;SCHIESSL, KLAUS
分类号 G03F7/20;H01J37/04;H01J37/28;H01J37/302;H01J37/317 主分类号 G03F7/20
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