发明名称 |
MULTI-BEAM WRITING OF PATTERN AREAS OF RELAXED CRITICAL DIMENSION |
摘要 |
To irradiate a target with a beam of energetic electrically charged particles, the beam is formed and imaged onto a target, where it generates a pattern image composed of pixels. For a pattern which comprises a primary pattern region (102) to be written with a predetermined primary feature size and a secondary pattern region (103) which is composed of structure features capable of being written with a secondary feature size, larger than the primary feature size. The structure features of the primary pattern region (102) are written by exposing a plurality of exposure spots on grid positions of a first exposure grid; the structure features in the secondary pattern region (103) are written by exposing a plurality of exposure spots on grid positions of a second exposure grid (164) according to a second arrangement which is coarser than the regular arrangement of the first exposure grid. |
申请公布号 |
EP3070528(A1) |
申请公布日期 |
2016.09.21 |
申请号 |
EP20160160622 |
申请日期 |
2016.03.16 |
申请人 |
IMS NANOFABRICATION AG |
发明人 |
PLATZGUMMER, ELMAR;SCHIESSL, KLAUS |
分类号 |
G03F7/20;H01J37/04;H01J37/28;H01J37/302;H01J37/317 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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