| 摘要 |
An integrated gas sensor having a tungsten/tungsten oxide gas sensing element, is provided with: a substrate of semiconductor material; and a structure of interconnection layers, arranged above the substrate and made of a number of stacked conductive layers and dielectric layers. The gas sensing element is integrated within the structure of interconnection layers and at least one electrode is provided within the structure of interconnection layers, electrically connected to the gas sensing element, designed to provide an electric current to the gas sensing element in order to cause heating thereof. |
