发明名称 |
CHEMICAL MECHANICAL POLISHING APPARATUS AND TEMPERATURE CONTROL PAD USED THEREIN |
摘要 |
The present invention relates to a chemical mechanical polishing apparatus, which comprises: a polishing pad revolving while coming in contact with a wafer during a chemical mechanical polishing process; and a temperature control pad disposed in the upper portion of the polishing pad so as to control the temperature of the polishing pad, thereby maintaining an appropriate temperature of the polishing pad before starting the chemical mechanical polishing process or during the chemical mechanical polishing process. The chemical mechanical apparatus keeps a constant polishing amount per unit time of the wafer by balancing chemical polishing and mechanical polishing, and maintains a constant abrasion state of a polishing surface of the wafer to improve the quality of the polishing surface of the wafer. |
申请公布号 |
KR20160109591(A) |
申请公布日期 |
2016.09.21 |
申请号 |
KR20150034312 |
申请日期 |
2015.03.12 |
申请人 |
K.C.TECH CO., LTD. |
发明人 |
CHO, MOON GI;MO, YEON MIN |
分类号 |
H01L21/304;B24B37/015;H01L21/02 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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