| 摘要 |
A silicon carbide substrate (10) includes a first impurity region (17), a well region (13) in contact with the first impurity region (17), and a second impurity region (14) separated from the first impurity region (17) by the well region (13). A first main surface (10a) includes a first region (10d) in contact with a channel region (CH), and a second region (10f) different from the first region (10d) A silicon-containing material (22a) is formed on the second region (10f) A first silicon dioxide region (15b) is formed on the first region (10d) A second silicon dioxide region (15c) is formed by oxidizing the silicon-containing material (22a). A gate runner (2) is electrically connected to a gate electrode (27) and formed in a position facing the second silicon dioxide region (15c) Consequently, a silicon carbide semiconductor device capable of achieving improved insulation performance between the gate runner and the substrate while the surface roughness of the substrate is suppressed, and a method of manufacturing the same can be provided. |
