| 摘要 |
PROBLEM TO BE SOLVED: To provide a diode such as a Schottky barrier diode that allows achieving a reduction in on-resistance even in having a lateral structure in which an anode electrode and a cathod electrode exist on the same plane, achieving high withstand voltage without using a field-plate structure, and is excellent in frequency characteristics.SOLUTION: A diode has an anode electrode and a cathod electrode provided at one sides of semiconductor layers 12 and 13. The anode electrode is divided into a plurality of anode electrodes, the divided anode electrode 14 being mutually connected with metal wiring 16, being surrounded by the cathod electrode 15, and having a shape in which the aspect ratio is 5 or less. Typically, the cathod electrode 15 surrounding each divided anode electrode 14 is integrally formed, and each divided anode electrode 14 has a dot shape. |
