| 摘要 |
The present invention provides high-density two-terminal memory architecture(s) having performance gains of a two-terminal memory and a relatively low manufacturing cost. For example, in various embodiments, the two-terminal memory architecture(s) can be formed on a substrate, and include two-terminal memory cells formed in conductive layer recess structures of the memory architecture. In an embodiment, a conductive layer recess can be generated by horizontal etching along with vertically penetrating etching. In another embodiment, the conductive layer recess can be patterned for each conductive layer of the two-terminal architecture. |
