RESISTIVE RANDOM ACCESS MEMORY

摘要

The present invention provides a resistive random access memory device which comprises: a first electrode; a second electrode; a metal oxide formed between the first and second electrodes. More specifically, the present invention provides a resistive random access memory device which comprises the metal oxide including first and second crystal grains which have different crystal directions, and form a boundary region. A surface having a surface index relevant to a surface crystallographically composed of only oxygen among crystal surfaces of the metal oxide is interposed between the first and second crystal grains. The boundary region is a surface forming an electrically conductible path when voltage is applied between the first and second electrodes.