| 摘要 |
The present invention provides a technique capable of performing epitaxial growth of an AlN film without any concern about cracking and having high quality crystals on a substrate having at least a surface part made of single crystal silicon. According to the present invention, the method includes a process of performing, one or more times, a cycle comprising: a first step of supplying a raw material gas including Al compounds on a Si substrate in vacuum atmosphere; and a second step of continuously supplying NH_4 gas to react the NH_4 gas with the AlN compounds adsorbed on the Si substrate to form a seed layer made of AlN, and a process of supplying a raw material gas including Al compounds, and NH_4 gas at the same time to form an AlN film on the seed layer. Since the seed layer is formed as a dense AlN film, cracks are prevented from occurring in the AlN film formed on the seed layer. |
