| 摘要 |
The present invention provides a plasma etching method and a plasma etching apparatus capable of restricting critical dimension (CD) loading. According to one embodiment of the present invention, the method comprises a first and a second process, which are a plasma etching method to using a photoresist as a mask to etch a lower layer film by plasma. The first process is a process to etch the lower layer film with plasma in a first processing condition selecting a selection ratio of a photoresist with respect to the lower layer film as a first selection ratio by using the photoresist and residues after processing as a mask without performing a process to remove the residue remaining on the photoresist processed in a predetermined pattern by exposure and development. The second process changes the selection ratio of the photoresist with respect to the lower layer film into a second selection ratio lower than the first selection ratio from the first processing condition during etching the lower layer film, and etches again the lower layer film with plasma by using the photoresist as a mask. |
