| 摘要 |
PROBLEM TO BE SOLVED: To provide a fine transistor.SOLUTION: A semiconductor device comprises: a first insulator on a substrate; a second insulator on the first insulator; a semiconductor on the second insulator; a first conductor and a second conductor on the semiconductor; a third insulator on the semiconductor; a fourth insulator on the third insulator; a third conductor on the fourth insulator; and a fifth insulator on the first insulator, the first conductor and the second conductor. The semiconductor has a first region, a second region, and a third region. The first region has a region overlapped with the third conductor via the third insulator and the fourth insulator. The second region has a region overlapped with the third conductor via the first conductor, the fourth insulator and the fifth insulator. The third region has a region overlapped with the third conductor via the second conductor, the fourth insulator and the fifth insulator. The fourth insulator has a region contacted with a lateral face of the fifth insulator, in a region superposed with the semiconductor.SELECTED DRAWING: Figure 1 |
