| 摘要 |
The semiconductor device includes a plurality of wiring layers formed on a semiconductor substrate, a pad (9a) formed on an uppermost wiring layer (9) of the plurality of wiring layers (5,7,9), a surface protection film (10) which includes an opening (10a) on the pad (9a) and is made of an inorganic insulating film, a rewiring (12) formed on the surface protection film (10); a pad electrode (13) formed on the rewiring, and a wire (20) connected to the pad electrode (13). The rewiring (12) includes a pad electrode mounting portion (121) on which the pad electrode (13) is mounted, a connection portion which is connected to the pad (9a), and an extended wiring portion which couples the pad electrode mounting portion (121) and the connection portion, and the pad electrode mounting portion (121) has a rectangular shape when seen in a plan view. |
