| 摘要 |
A pad and process for polishing metal damascene structures on a semiconductor wafer, the pad having low elastic recovery and high energy dissipation coupled with a high pad stiffness, and the pad having macro-texture that includes grooves having a groove depth (D) of about 75 to about 2540 micrometers, a groove width (W) of about 125 to about 1270 micrometers and a groove pitch (P) of about 500 to 3600 micrometers. The groove pattern provides a groove stiffness quotient, GSQ, of about 0.03 to about 1.0; and a groove flow quotient, GFQ, of about 0.03 to about 0.9. |
