| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device capable of reducing the capacity between a gate and a drain.SOLUTION: A semiconductor device comprises: a channel layer 14; an electron supply layer 15 disposed on the channel layer 14; a gate electrode 19 disposed on the electron supply layer 15; a source electrode 17 and a drain electrode 18 disposed on the electron supply layer 15, sandwiching the gate electrode 19 therebetween; and a support layer 13 disposed below the channel layer 14 to support the channel layer 14 and including a cavity 20 located deflected to the drain electrode 18 side with respect to the gate electrode 19. |
